The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Feb. 19, 2008
Applicants:

Brent A. Anderson, Jericho, VT (US);

Andres Bryant, Burlington, VT (US);

Edward J. Nowak, Essex Junction, VT (US);

Edmund J. Sprogis, Underhill, VT (US);

Inventors:

Brent A. Anderson, Jericho, VT (US);

Andres Bryant, Burlington, VT (US);

Edward J. Nowak, Essex Junction, VT (US);

Edmund J. Sprogis, Underhill, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/76205 (2013.01); H01L 21/823878 (2013.01); H01L 29/7846 (2013.01);
Abstract

A semiconductor device and method of manufacturing is disclosed which has a tensile and/or compressive strain applied thereto. The method includes forming at least one trench in a material; and filling the at least one trench by an oxidation process thereby forming a strain concentration in a channel of a device. The structure includes a gate structure having a channel and a first oxidized trench on a first of the channel, respectively. The first oxidized trench creates a strain component in the channel to increase device performance.


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