The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Jun. 04, 2007
Dureseti Chidambarrao, Weston, CT (US);
Omer H. Dokumaci, Wappingers Falls, NY (US);
Oleg G. Gluschenkov, Poughkeepsie, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Omer H. Dokumaci, Wappingers Falls, NY (US);
Oleg G. Gluschenkov, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.