The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Jul. 08, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Huajie Chen, Danbury, CT (US);
Dureseti Chidambarrao, Weston, CT (US);
Omer H. Dokumaci, Gainesville, FL (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 21/308 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/3081 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 27/092 (2013.01); H01L 29/1054 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a stressing layer on a substrate. The method may include doping the stressing layer with dopants. The method may include forming a silicide layer on the stressing layer. Moreover, the stressing layer may include a first lattice constant different from a second lattice constant of the substrate.