The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2004
Filed:
Jan. 06, 2004
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a semiconductor device, includes forming a first locally doped semiconductor region of a first conductivity type and a second locally doped semiconductor region of a second conductivity type over an undoped, lower semiconductor region. A first etch is implemented to simultaneously create a desired pattern in the first and second locally doped semiconductor regions in a manner that also provides a first passivation of exposed sidewalls thereof, wherein the first etch removes material from the first and second locally doped regions at a substantially constant rate with respect to one another, and in a substantially anisotropic manner. A second etch is implemented to complete the desired pattern in the undoped, lower semiconductor region in a manner that protects the first and second locally doped regions from additional material removal therefrom.