The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Apr. 16, 2019
Tokyo Electron Limited, Tokyo, JP;
International Business Machines Corporation, Armonk, NY (US);
Devi Koty, Albany, NY (US);
Qingyun Yang, Albany, NY (US);
Hiroyuki Miyazoe, Armonk, NY (US);
Takashi Ando, Armonk, NY (US);
Eduard Cartier, Armonk, NY (US);
Vijay Narayanan, Armonk, NY (US);
Sebastian Ulrich Englemann, Armonk, NY (US);
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A resistive random access memory (RERAM) apparatus and method for forming the apparatus are provided. Oxygen content control in the RERAM is provided. To provide oxygen content control, a via to an electrode of the RERAM is formed utilizing an oxygen-free plasma etch step. In one embodiment, the dielectric within which the via is formed is silicon nitride (SiN). In exemplary embodiments, the plasma chemistry is a hydrofluorocarbon (CHF)-based plasma chemistry or a fluorocarbon (CF)-based plasma chemistry. In one embodiment, the resistive layer of the RERAM is a metal oxide. In another embodiment, the oxygen concentrations in the electrode of the RERAM under the via and outside the via are the same after formation of the via.