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For the Inventor, By the Inventor

White Plains, NY, United States of America

Hiroyuki Miyazoe

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This inventor holds 94 USPTO granted patents and 12 published patent applications, primarily in Resistive Memory Technology (CPC class H01L45-1233). Top assignees: International Business Machines Corporation, Applied Materials, Inc., Globalfoundries Inc.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Miyazoe. Retrieved from https://idiyas.com/inventor/hiroyuki-miyazoe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 94 

% Patents Active = 66.0

Average Co-Inventor Count = 4.2

ph-index = 11

Forward Citations = 588(Granted Patents)

Forward Citations (Not Self Cited) = 522(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • San Jose, CA (US) (2017 - 2019)
  • Armonk, NY (US) (2022)
  • Yorktown Heights, NY (US) (2023)
  • White Plains, NY (US) (2014 - 2024)

Company Filing History:

goldMedal86 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal4 out of 14,454 
 
Applied Materials, Inc.
 patents
bronzeMedal4 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 3 out of 1,294 
 
Zeon Corporation
 patents
5. 2 out of 10,904 
 
Tokyo Electron Limited
 patents
6. 1 out of 52 
 
Elpis Technologies Inc.
 patents
7. 1 out of 3,609 
 
Macronix International Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2014-2026

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Areas of Expertise:
Resistive Random Access Memory
Dielectric Deposition
Semiconductor Structures
Phase Change Materials
Conductive Bridging RAM
Memory Device Integration
Oxide-Based Memory
Non-Volatile Memory
Electrode Isolation
High-Resistance Devices
Artificial Intelligence Integration
Patterning Techniques
94 patents (USPTO):Explore Patents
1. 12635426 - Resistive random-access memory device with step height difference (2026-05-19),
2. 12635425 - Stacked conductive bridge random access memory and access devices (2026-05-19),
3. 12628573 - Trimming intermediate carbon layer to achieve nanometer scale patterning (2026-05-12),
4. 12575110 - Localized anneal of ferroelectric dielectric (2026-03-10),
5. 12471293 - In-situ low temperature dielectric deposition and selective trim of phase change materials (2025-11-11),
6. 12453293 - Redundant bottom pad and sacrificial via contact for process induced RRAM forming (2025-10-21),
7. 12408564 - Process-induced forming of oxide RRAM (2025-09-02),
8. 12284922 - Stacked access device and resistive memory (2025-04-21),
9. 12225833 - Oxide-based resistive memory having a plasma-exposed bottom electrode (2025-02-11),
10. 11956975 - BEOL fat wire level ground rule compatible embedded artificial intelligence integration (2024-04-09),
11. 11915926 - Percolation doping of inorganic-organic frameworks for multiple device applications (2024-02-27),
12. 11889771 - Mitigating moisture driven degradation of silicon doped chalcogenides (2024-01-30),
13. 11844290 - Plasma co-doping to reduce the forming voltage in resistive random access memory (ReRAM) devices (2023-12-12),
14. 11730070 - Resistive random-access memory device with step height difference (2023-08-15),
15. 11647680 - Oxide-based resistive memory having a plasma-exposed bottom electrode (2023-05-09),

Title: The Innovative Journey of Hiroyuki Miyazoe

Introduction: Hiroyuki Miyazoe is a visionary inventor based in White Plains, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hiroyuki Miyazoe holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Hiroyuki Miyazoe has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized industries worldwide.

Collaborations: Throughout his career, Hiroyuki Miyazoe has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and creativity that has led to numerous successful projects and inventions.

Conclusion: Hiroyuki Miyazoe's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology in profound ways.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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