The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Dec. 29, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Cheng-Wei Cheng, White Plains, NY (US);

Huai-Yu Cheng, Pleasantville, NY (US);

I-Ting Kuo, Taoyuan, TW;

Robert L. Bruce, White Plains, NY (US);

Martin Michael Frank, Dobbs Ferry, NY (US);

Hiroyuki Miyazoe, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/041 (2023.02); H10B 63/24 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8413 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02);
Abstract

A method for mitigating moisture driven degradation of silicon doped chalcogenides includes placing a silicon doped chalcogenide composition in a process chamber, passivating dangling silicon bonds of the silicon doped chalcogenide composition by flooding the process chamber with forming gas or with hydrogen plasma, purging the forming gas or the hydrogen plasma from the process chamber, and removing the passivated silicon doped chalcogenide composition from the process chamber.


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