The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Feb. 27, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Hiroyuki Miyazoe, White Plains, NY (US);

Seyoung Kim, White Plains, NY (US);

Asit Ray, Baldwin Place, NY (US);

Takashi Ando, Tuckahoe, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H10N 70/021 (2023.02); H10N 70/8833 (2023.02);
Abstract

Techniques facilitating resistive random-access memory device with step height difference are provided. A resistive random-access memory device can comprise a first electrode located within a trench of a dielectric layer. The resistive random-access memory device can also comprise a metal oxide layer comprising a first section located within the trench of the dielectric layer, and a second section located over the first electrode, and over a barrier metal layer. Further, the resistive random-access memory device can comprise a second electrode located over the metal oxide layer.


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