The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

Jun. 11, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Takashi Ando, Eastchester, NY (US);

Hiroyuki Miyazoe, White Plains, NY (US);

Eduard Albert Cartier, New York, NY (US);

Babar Khan, Ossining, NY (US);

Youngseok Kim, Upper Saddle River, NJ (US);

Dexin Kong, Guilderland, NY (US);

Soon-Cheon Seo, Glenmont, NY (US);

Joel P. De Souza, Putam Valley, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1641 (2013.01); H01L 27/2463 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01);
Abstract

Provided are embodiments for a semiconductor device. The semiconductor device includes a bottom electrode, wherein the bottom electrode is formed on a metal interconnect electrode, and a dielectric layer on a surface of the bottom electrode. The semiconductor device also includes a top electrode formed on a surface of the dielectric layer, wherein at least one of the top electrode or the bottom electrode is a plasma treated top electrode or plasma treated bottom electrode. Also provided are embodiments for a method of fabricating a resistive switching device where at least one of the plurality of layers of the memory stack is processed with a charge particle treatment.


Find Patent Forward Citations

Loading…