Upper Saddle River, NJ, United States of America

Youngseok Kim

This inventor holds 29 USPTO granted patents and 8 published patent applications and 3 EPO patents, primarily in Quantum Computing. Top assignee: International Business Machines Corporation. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Youngseok Kim. Retrieved from https://idiyas.com/inventor/youngseok-kim-vikjftse

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.8

ph-index = 2

Forward Citations = 16(Granted Patents)


Location History:

  • Urbana, IL (US) (2022)
  • Upper Saddle River, NJ (US) (2021 - 2024)

Company Filing History:


Years Active: 2021-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Quantum Gates
Resistive Memory
RRAM Formation
Phase Change Memory
AI Devices
Memory Arrays
Quantum Errors
Semiconductor Devices
Neuromorphic Devices
Voltage Reduction
Machine Learning
Decoders
29 patents (USPTO):Explore Patents

Title: **Youngseok Kim: A Pioneer in Resistive Memory Technologies**

Introduction

Youngseok Kim is an accomplished inventor based in Upper Saddle River, NJ, USA, renowned for his significant contributions to resistive memory technologies. With a remarkable portfolio comprising 19 patents, Kim has established himself as a key player in the innovation landscape, particularly in the realm of advanced memory devices.

Latest Patents

Youngseok Kim's latest patents showcase his innovative approach to memory device technology. One notable patent is the "Oxide-based resistive memory having a plasma-exposed bottom electrode." This invention introduces a resistive switching device featuring a metal interconnect electrode and a charge-particle-treated memory stack, which includes a top electrode, a bottom electrode, and a dielectric layer. The unique application of charge-particle treatments results in a current-conducting filament characteristic, enhancing the device's performance.

Another significant patent is the "Horizontal RRAM device and architecture for variability reduction." This invention details an apparatus comprising a dielectric layer situated between two electrodes with a third electrode interposed, aimed at improving variability in resistive switching applications. These advancements reflect Youngseok Kim's commitment to enhancing memory technology's efficiency and reliability.

Career Highlights

Kim is currently affiliated with the International Business Machines Corporation (IBM), where he continues to innovate and develop cutting-edge technology. His work has significantly influenced the evolution of resistive memory, positioning him as a leader in this specialized field.

Collaborations

Throughout his career, Youngseok Kim has collaborated with esteemed colleagues such as Soon-Cheon Seo and Injo Ok. These partnerships have facilitated a dynamic exchange of ideas and knowledge, further propelling advancements in memory technology.

Conclusion

In summary, Youngseok Kim's work in resistive memory technologies stands as a testament to his inventive spirit and technical expertise. With 19 patents to his name, including noteworthy innovations at IBM, he continues to shape the future of computing memory solutions. His collaborations and ongoing research will undoubtedly lead to further breakthroughs in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…