The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Dec. 04, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Luxherta Buzi, Chappaqua, NY (US);

Robert L. Bruce, White Plains, NY (US);

Hiroyuki Miyazoe, White Plains, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/10 (2023.01);
U.S. Cl.
CPC ...
H10N 70/068 (2023.02); H10B 63/10 (2023.02);
Abstract

Embodiments of include a technique for trimming an intermediate carbon layer by hydrogen (H) plasma to achieve nanometer scale critical dimension patterning with high selectivity to metals and dielectrics. The technique includes providing a structure as a stack having at least one metal layer, a carbon layer, and at least one phase change material layer, the stack extending in a first dimension. The technique includes etching the carbon layer to a first width in a second dimension, the second dimension being perpendicular to the first dimension. The technique includes applying hydrogen plasma to laterally etch the carbon layer to a second width in the second dimension, the hydrogen plasma being applied with substantially no bias power and to avoid etching the at least one metal layer and the at least one phase change material layer.


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