Luxherta Buzi

Title: Luxherta Buzi: Innovator in Semiconductor Memory Technology

Introduction

Luxherta Buzi is a notable inventor based in Chappaqua, NY (US). He has made significant contributions to the field of semiconductor memory technology. His innovative work has led to the development of a unique method that enhances the fabrication of resistive semiconductor memory structures.

Latest Patents

Luxherta Buzi holds 1 patent for his invention titled "In-situ low temperature dielectric deposition and selective trim of phase change materials." This method fabricates a resistive semiconductor memory structure that allows for in-situ selective etching of phase change materials during the deposition of dielectric at low temperatures within the same processing chamber. The process results in a semiconductor wafer that includes a trimmed resistive memory device structure, which features one or more layers of phase change material. These layers have oxidized sidewall surfaces due to a prior etching step. The encapsulation of the trimmed resistive memory device structure is achieved by depositing a layer of dielectric material and selectively removing the phase change material oxidation at the sidewall surfaces during the encapsulation process.

Career Highlights

Luxherta Buzi is currently employed at International Business Machines Corporation (IBM), where he continues to advance his research and development in semiconductor technologies. His work has been instrumental in improving the efficiency and performance of memory devices.

Collaborations

One of his notable collaborators is Hiroyuki Miyazoe, with whom he has worked closely on various projects related to semiconductor memory technology.

Conclusion

Luxherta Buzi's innovative contributions to semiconductor memory technology exemplify the impact of dedicated research and development in the field. His patent reflects a significant advancement that could influence future memory device fabrication techniques.