Patterson, NY, United States of America

Shyng-Tsong Chen

This inventor holds 59 USPTO granted patents and 5 published patent applications, primarily in Interconnect Structures (CPC class H01L). Top assignees: International Business Machines Corporation, Freudenberg Nonwovens, Globalfoundries Inc.. Active years: 2001-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shyng-Tsong Chen. Retrieved from https://idiyas.com/inventor/shyng-tsong-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 59 

% Patents Active = 52.5

Average Co-Inventor Count = 4.4

ph-index = 13

Forward Citations = 607(Granted Patents)

Forward Citations (Not Self Cited) = 589(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Patterson, NJ (US) (2002)
  • Albany, NY (US) (2013)
  • Patterson, NY (US) (2001 - 2015)
  • Rensselaer, NY (US) (2009 - 2023)

Company Filing History:


Years Active: 2001-2025

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Areas of Expertise:
Magnetoresistive Memory
Self-Aligned Vias
Embedded Memory Device
Via Design Optimization
Crossbar Array
Profile Control
Low-K Dielectrics
Single Damascene
Air Gap Formation
Gas Cluster Ion Beam
Semiconductor Structures
Mechanical Strength
59 patents (USPTO):Explore Patents

Title: Innovations of Shyng-Tsong Chen in Interconnect Structures

Introduction

Shyng-Tsong Chen, a prominent inventor based in Patterson, NY, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 58 patents, Chen has focused on the development of interconnect structures and methods that enhance the performance and reliability of electronic devices.

Latest Patents

Among his latest patents are "Interconnect structures including self-aligned vias" and "Interconnect integration scheme with fully self-aligned vias." The first patent details a novel structure that includes a first interconnect structure above a substrate, where metal lines are formed in a first interlayer dielectric. A second interconnect structure, comprising a second cap layer made of insulating material, allows for self-aligned vias to be effectively coupled to the metal line of the first interconnect structure. This design minimizes the risk of misalignment, ensuring optimal functionality.

The second patent presents a method for producing self-aligned vias by forming a top-level line pattern. This innovative approach incorporates conductive lines within a dielectric material and involves precise recessing and filling processes to create openings that align with conductive lines, achieving better integration and reliability in electronic components.

Career Highlights

Shyng-Tsong Chen has had a distinguished career, working in reputable organizations such as IBM (International Business Machines Corporation) and Freudenberg Nonwovens. His work has consistently pushed the boundaries of technology, earning him recognition in the field of semiconductor research and development.

Collaborations

Throughout his career, Chen has collaborated with notable professionals such as Chih-Chao Yang and Terry Allen Spooner. These partnerships have fostered a culture of innovation, leading to advancements in interconnect technology that continue to shape the industry.

Conclusion

Shyng-Tsong Chen’s contributions to the field of interconnect structures underscore the importance of innovation in the technology sector. With a rich history of patents and collaborations, his work will undoubtedly continue to influence the future of semiconductor advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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