Embedded beol memory device with top electrode pillar

Abstract

Embedded BEOL memory devices having a top electrode pillar are provided. In one aspect, a method of forming an embedded memory device includes: depositing a first ILD on a substrate; forming first/second interconnect in the first ILD over logic/memory regions of the substrate; depositing a capping layer onto the first ILD; forming a memory film stack on the capping layer; patterning the memory film stack into a memory device(s) including a bottom electrode, a dielectric element, and a top electrode; patterning the top electrode to form a pillar-shaped top electrode; depositing a conformal encapsulation layer over the capping layer and memory device(s); depositing a second ILD over the conformal encapsulation layer; and forming a first metal line(s) in the second ILD in contact with the first interconnect(s), and a second metal line(s) in the second ILD in contact with the pillar-shaped top electrode. A device is also provided.