The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2013
Filed:
Apr. 05, 2011
Ying Zhang, Yorktown Heights, NY (US);
Qingyun Yang, Poughkeepsie, NY (US);
Hongwen Yan, Somers, NY (US);
Ying Zhang, Yorktown Heights, NY (US);
Qingyun Yang, Poughkeepsie, NY (US);
Hongwen Yan, Somers, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure, and method of forming a semiconductor structure, that includes a gate structure on a semiconductor substrate, in which the gate structure includes a gate conductor and a high-k gate dielectric layer. The high-k gate dielectric layer is in contact with the base of the gate conductor and is present on the sidewalls of the gate conductor for a dimension that is less than ¼ the gate structure's height. The semiconductor structure also includes source regions and drain regions present in the semiconductor substrate on opposing sides of the gate structure.