The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2005

Filed:

Jul. 01, 2002
Applicants:

Sadanand V. Deshpande, Fishkill, NY (US);

Toshiharu Furukawa, Essex Junction, VT (US);

David V. Horak, Essex Junction, VT (US);

Wesley C. Natzle, New Paltz, NY (US);

Akihisa Sekiguchi, Briarcliff Manor, NY (US);

Len Y. Tsou, New City, NY (US);

Qingyun Yang, Hopewell Junction, NY (US);

Inventors:

Sadanand V. Deshpande, Fishkill, NY (US);

Toshiharu Furukawa, Essex Junction, VT (US);

David V. Horak, Essex Junction, VT (US);

Wesley C. Natzle, New Paltz, NY (US);

Akihisa Sekiguchi, Briarcliff Manor, NY (US);

Len Y. Tsou, New City, NY (US);

Qingyun Yang, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/8238 ; H01L021/8236 ; H01L021/8234 ; H01L021/336 ;
U.S. Cl.
CPC ...
Abstract

A method of forming a structure having sub-lithographic dimensions is provided. The method includes: forming a chamfered mandrel on a substrate, the mandrel having an angled surface; and performing an angled ion implantation to obtain an implanted shadow region in the substrate, the implanted shadow mask having at least one sub-lithographic dimension.


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