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For the Inventor, By the Inventor

New Paltz, NY, United States of America

Wesley Charles Natzle

This inventor holds 66 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in High-k Transistor Technology (CPC class H01L). Top assignees: International Business Machines Corporation, Tokyo Electron Limited, Siemens Aktiengesellschaft. Active years: 1992-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wesley Charles Natzle. Retrieved from https://idiyas.com/inventor/wesley-charles-natzle

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 66 

% Patents Active = 51.5


Average Co-Inventor Count = 3.2

ph-index = 21

Forward Citations = 1,720(Granted Patents)

Forward Citations (Not Self Cited) = 1,660(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Wappingers Falls, NY (US) (1992 - 1995)
  • New Paltz, NY (US) (1997 - 2016)

Company Filing History:

goldMedal64 out of 166,325 
 
International Business Machines Corporation
 patents
silverMedal7 out of 10,883 
 
Tokyo Electron Limited
 patents
bronzeMedal2 out of 30,867 
 
Siemens Aktiengesellschaft
 patents
where one patent can have more than one assignee

Years Active: 1992-2016

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Areas of Expertise:
High-k Transistors
MOSFET Devices
Etching Techniques
FinFET Fabrication
Oxide Growth Control
Wafer Uniformity
Doped Polysilicon
Dynamic Metrology
Low Resistance Gate
Surface Preparation
Chemical Oxide Removal
66 patents (USPTO):Explore Patents
1. 9263276 - High-k/metal gate transistor with L-shaped gate encapsulation layer (2016-02-16),
2. 9252018 - High-k/metal gate transistor with L-shaped gate encapsulation layer (2016-02-02),
3. 8900961 - Selective deposition of germanium spacers on nitride (2014-12-02),
4. 8575709 - High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof (2013-11-05),
5. 8492803 - Field effect device with reduced thickness gate (2013-07-23),
6. 8318565 - High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof (2012-11-27),
7. 8198103 - Addition of ballast hydrocarbon gas to doped polysilicon etch masked by resist (2012-06-12),
8. 7955926 - Structure and method to control oxidation in high-k gate structures (2011-06-07),
9. 7859013 - Metal oxide field effect transistor with a sharp halo (2010-12-28),
10. 7851299 - Subgroundrule space for improved metal high-k device (2010-12-14),
11. 7705385 - Selective deposition of germanium spacers on nitride (2010-04-27),
12. 7567700 - Dynamic metrology sampling with wafer uniformity control (2009-07-28),
13. 7502709 - Dynamic metrology sampling for a dual damascene process (2009-03-10),
14. 7502660 - Feature dimension deviation correction system, method and program product (2009-03-10),
15. 7498271 - Nitrogen based plasma process for metal gate MOS device (2009-03-03),

Wesley Charles Natzle: A Leader in Transistor Innovations

Introduction

Wesley Charles Natzle, based in New Paltz, NY, is an accomplished inventor with an impressive portfolio of 66 patents. His contributions to the field of semiconductor technology, particularly in the development of advanced transistors, have made a significant impact on the industry.

Latest Patents

His latest patent, titled "High-k/metal gate transistor with L-shaped gate encapsulation layer," showcases an innovative transistor design. This patent describes a transistor that includes a silicon layer with source and drain regions, a gate stack positioned between these regions, and an L-shaped gate encapsulation layer. The sophisticated design incorporates a spacer above the horizontal portion of the encapsulation layer, enhancing its efficiency. The gate stack consists of multiple layers, including a high dielectric constant material and metal or polysilicon, demonstrating cutting-edge advancements in transistor technology.

Career Highlights

Throughout his career, Wesley has worked with renowned companies such as IBM and Tokyo Electron Limited. His experiences in these organizations have allowed him to develop and refine groundbreaking technologies that contribute to the betterment of electronic devices.

Collaborations

Wesley has collaborated with other notable professionals in the field, including Chienfan Yu and Hussein Ibrahim Hanafi. These partnerships have fostered a culture of innovation, leading to significant developments in semiconductor technology.

Conclusion

Wesley Charles Natzle's work exemplifies the spirit of innovation and dedication to advancing technology. His numerous patents and collaborations reflect his passion for creating cutting-edge solutions in the semiconductor industry. As a leading inventor, he continues to influence the landscape of modern electronics through his significant contributions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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