The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Jun. 24, 2008
Ricardo A. Donaton, Cortlandt Manor, NY (US);
Rashmi Jha, Wappingers Falls, NY (US);
Siddarth A. Krishnan, Peekskill, NY (US);
Xi LI, Somers, NY (US);
Renee T. MO, Briarcliff Manor, NY (US);
Naim Moumen, Walden, NY (US);
Wesley C. Natzle, New Paltz, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Richard S. Wise, Newburgh, NY (US);
Ricardo A. Donaton, Cortlandt Manor, NY (US);
Rashmi Jha, Wappingers Falls, NY (US);
Siddarth A. Krishnan, Peekskill, NY (US);
Xi Li, Somers, NY (US);
Renee T. Mo, Briarcliff Manor, NY (US);
Naim Moumen, Walden, NY (US);
Wesley C. Natzle, New Paltz, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Richard S. Wise, Newburgh, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention, in one embodiment, provides a method of forming a gate structure including providing a substrate including a semiconducting device region, a high-k dielectric material present atop the semiconducting device region, and a metal gate conductor atop the high-k dielectric material, applying a photoresist layer atop the metal gate conductor; patterning the photoresist layer to provide an etch mask overlying a portion of the metal gate conductor corresponding to a gate stack; etching the metal gate conductor and the high-k dielectric material selective to the etch mask; and removing the etch mask with a substantially oxygen free nitrogen based plasma.