Siddarth A Krishnan

This inventor holds 90 USPTO granted patents and 24 published patent applications and 1 EPO patent, primarily in Semiconductor Devices (CPC class H01L29-4966). Top assignees: International Business Machines Corporation, Applied Materials, Inc., Globalfoundries Inc.. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Siddarth A Krishnan. Retrieved from https://idiyas.com/inventor/siddarth-a-krishnan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 90 (Patent Applications = 24)

% Patents Active = 74.4

EPO Patents = 1 (Patent Applications = 12)

Average Co-Inventor Count = 4.4

ph-index = 11

Forward Citations = 827(Granted Patents)

Forward Citations (Not Self Cited) = 762(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Hopewell Junction, NY (US) (2012 - 2013)
Peekskill, NY (US) (2009 - 2019)
Peerskill, NY (US) (2019)
Newark, NY (US) (2019)
San Jose, CA (US) (2021 - 2023)
Newark, CA (US) (2016 - 2024)

Company Filing History:

51 out of 166,483

International Business Machines Corporation

patents

22 out of 14,523

Applied Materials, Inc.

Freescale Semiconductor,inc.

patents

5. 1 out of 59

Globalfoundries U.S. 2 LLC

patents

where one patent can have more than one assignee

Years Active: 2009-2026

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Areas of Expertise:

Neuromorphic Switching

Semiconductor Structures

Memory Arrays

Power Devices

Threshold Voltage Tuning

High K Metal Gate

Field Effect Transistor

Thin Films

Integrated Circuits

Doping Engineering

Dielectric Material

Multi-State Memory

90 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12757732 - Bonding layers formed of high thermal conductivity materials (2026-10-06),

2. 12740117 - Methods of forming semiconductor structures (2026-09-15),

3. 12713663 - SILICON SUPER JUNCTION STRUCTURES FOR INCREASED VOLTAGE (2026-08-18),

4. 12622025 - Silicon carbide transistor with channel counter-doping and pocket-doping (2026-05-05),

5. 12178146 - Dual oxide analog switch for neuromorphic switching (2024-12-24),

6. 11908914 - Methods of forming semiconductor structures (2024-02-20),

7. 11837285 - Bias temperature instability correction in memory arrays (2023-12-05),

8. 11830824 - Edge protection on semiconductor substrates (2023-11-28),

9. 11790989 - Soft reset for multi-level programming of memory cells in non-von neumann architectures (2023-10-17),

10. 11769665 - Power device structures and methods of making (2023-09-26),

11. 11705490 - Graded doping in power devices (2023-07-18),

12. 11616195 - Dual oxide analog switch for neuromorphic switching (2023-03-28),

13. 11605741 - Methods of forming doped silicide power devices (2023-03-14),

14. 11410873 - Deep trench integration processes and devices (2022-08-09),

15. 11362275 - Annealing processes for memory devices (2022-06-14),

Title: The Innovative Journey of Siddarth A. Krishnan

Introduction: Siddarth A. Krishnan, a talented inventor hailing from Peekskill, NY, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Siddarth A. Krishnan holds several patents in the field of artificial intelligence and renewable energy technologies, showcasing his commitment to creating a sustainable future.

Career Highlights: With a background in engineering and a passion for problem-solving, Siddarth A. Krishnan has led numerous research projects that have resulted in cutting-edge inventions with real-world applications.

Collaborations: Throughout his career, Siddarth A. Krishnan has collaborated with leading research institutions and tech companies to bring his ideas to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Siddarth A. Krishnan's dedication to innovation and his relentless pursuit of technological advancement make him a true pioneer in the field of inventing, with a promising future ahead.

Profile summary based on public USPTO records.