The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Jan. 27, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Ashish Pal, San Ramon, CA (US);
Pratik B. Vyas, Fremont, CA (US);
El Mehdi Bazizi, San Jose, CA (US);
Stephen Weeks, Morrisville, VT (US);
Ludovico Megalini, Mountain View, CA (US);
Siddarth Krishnan, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A silicon carbide transistor may be formed with a channel that includes a p-doped region between n-doped source and drain regions. A counter-doped region may be formed at the top of the channel directly underneath the gate oxide. Instead of using the conventional doping levels for the p-doped region, the doping concentration may be increase to be greater than about 1e18 cm. The transistor may also include pocket regions on one or both sides of the channel. The pocket regions may be formed in the counter-doped region and may extend up to the gate oxide. These improvements individually and/or in combination may increase the current in the channel of the transistor without significantly increasing the threshold voltage beyond acceptable operating limits.