The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2023

Filed:

Aug. 22, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Christophe J. Chevallier, Palo Alto, CA (US);

Siddarth Krishnan, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0023 (2013.01); G11C 11/1653 (2013.01); G11C 11/1675 (2013.01); G11C 13/0069 (2013.01); G11C 2213/79 (2013.01);
Abstract

A method of correcting bias temperature instability in memory arrays may include applying a first bias to a memory cell, where the memory cell may include a memory element and a select element, and the first bias may causes a value to be stored in the memory element. The first bias causes a bias temperature instability (BTI) associated with the memory cell to increase. The method may also include applying a second bias to the memory cell, where the second bias may have a polarity that is opposite of the first bias, and the value stored in the memory element remains in the memory element after the second bias is applied. The second bias may also cause the BTI associated with the memory cell to decrease while maintaining any value stored in the memory cell.


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