Palo Alto, CA, United States of America

Christophe J Chevallier

This inventor holds 311 USPTO granted patents and 7 published patent applications and 2 EPO patents, primarily in Memory Technology (CPC class G11C13-004). Top assignees: Micron Technology Incorporated, Unity Semiconductor Corporation, Micron Quantum Devices Inc.. Active years: 1993-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Christophe J Chevallier. Retrieved from https://idiyas.com/inventor/christophe-j-chevallier

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 311 

% Patents Active = 70.1

 

Average Co-Inventor Count = 2.0

ph-index = 48

Forward Citations = 6,986(Granted Patents)

Forward Citations (Not Self Cited) = 5,964(Dec 10, 2025)


Inventors with similar research interests:

🔬 See more inventors

Location History:

  • Mountain View, CA (US) (1993 - 2002)
  • Sunnyvale, CA (US) (2014 - 2016)
  • Palo Alto, CA (US) (1993 - 2023)

Company Filing History:


Years Active: 1993-2023

Loading Chart...
Loading Chart...
Areas of Expertise:
Memory Arrays
SRAM Design
Non-Volatile Memory
Access Signal Adjustment
Bias Temperature Instability
Two-Terminal Devices
High Voltage Switching
Reactive Metal Layer
Error Correction
Low-Power Operation
Cross-Point Arrays
Memory Element
311 patents (USPTO):Explore Patents

Title: Christophe Chevallier: Innovator Extraordinaire in Non-Volatile Memory Arrays

Introduction:

In the realm of innovations and patents, Christophe Chevallier has distinguished himself as a prolific inventor and expert in the field of non-volatile memory arrays. With an impressive collection of patents to his name and a career marked by noteworthy collaborations, Chevallier has made significant contributions to the advancement of memory storage technology. This article explores his latest patents, career highlights, and collaborative endeavors in the industry.

Latest Patents:

One of Chevallier's recent patents, "Retention drift correction in non-volatile memory arrays," showcases his ingenuity in addressing the challenge of memory element drift. This patent introduces methods and architectures for refreshing memory elements by utilizing a reference array that stores the original values of the memory elements. By comparing and matching the drifted values with the known originals, Chevallier's invention allows for efficient and accurate refreshing of memory elements over time.

Another notable patent by Chevallier, "Memory element with a reactive metal layer," focuses on re-writeable non-volatile memory devices. This invention utilizes tantalum, a reactive metal, in a two-terminal memory element, which allows for the storage of multiple resistive states representing different data. With this new approach, Chevallier expands the possibilities of non-volatile memory technology, paving the way for more efficient and flexible memory solutions.

Career Highlights:

To achieve such groundbreaking innovations, Chevallier has held crucial positions in prominent companies in the semiconductor industry. Notably, he has contributed significantly to Unity Semiconductor Corporation and Micron Technology Incorporated. By leveraging his expertise and knowledge, Chevallier has consistently driven advancements in non-volatile memory technology, positioning himself as a key figure in the field.

Collaborations:

Throughout his career, Christophe Chevallier has collaborated with various experts and pioneers in the industry. Notable coworkers who have worked alongside him include Darrell Rinerson and Chang Hua Siau. These collaborations have enabled the exchange of ideas and expertise, fostering an environment for groundbreaking innovations and groundbreaking memory storage solutions.

Conclusion:

Christophe Chevallier's vast collection of patents, including the recent advancements in non-volatile memory arrays, showcases his immense contributions to the field of memory storage technology. Through his inventive approaches, Chevallier has initiated significant breakthroughs in memory element drift correction and reactive metal layers. His career highlights, as well as collaborations with esteemed colleagues, continue to shape the landscape of non-volatile memory arrays and inspire future innovations in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…