Darrell Rinerson

This inventor holds 100 USPTO granted patents and 7 published patent applications and 2 EPO patents, primarily in Memory Technology (CPC class G11C13-0007). Top assignees: Unity Semiconductor Corporation, Hefei Reliance Memory Limited. Active years: 2004-2023.

USPTO Granted Patents = 100 (Patent Applications = 7)

% Patents Active = 65.0

EPO Patents = 2 (Patent Applications = 2)

Average Co-Inventor Count = 3.8

ph-index = 35

Forward Citations = 3,382(Granted Patents)

Forward Citations (Not Self Cited) = 2,790(Dec 10, 2025)

Inventors with similar research interests:

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Company Filing History:

93 out of 301

Unity Semiconductor Corporation

patents

7 out of 76

Hefei Reliance Memory Limited

patents

Years Active: 2004-2023

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Areas of Expertise:

Two-Terminal Memory

Memory Architecture

Multi-Resistive State

Reactive Metal Layer

Cross-Point Arrays

Thin-Film Materials

Ion Implantation

Non-Volatile Memory

Conductive Oxide Electrode

Memory Cell Formation

Read Current Management

Selection Device

100 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11672189 - Two-terminal reversibly switchable memory device (2023-06-06),

2. 11502249 - Memory element with a reactive metal layer (2022-11-15),

3. 11398256 - Local bit lines and methods of selecting the same to access memory elements in cross-point arrays (2022-07-26),

4. 11063214 - Two-terminal reversibly switchable memory device (2021-07-13),

5. 10833125 - Memory element with a reactive metal layer (2020-11-10),

6. 10680171 - Two-terminal reversibly switchable memory device (2020-06-09),

7. 10622028 - Local bit lines and methods of selecting the same to access memory elements in cross-point arrays (2020-04-14),

8. 10340312 - Memory element with a reactive metal layer (2019-07-02),

9. 10224480 - Two-terminal reversibly switchable memory device (2019-03-05),

10. 10002646 - Local bit lines and methods of selecting the same to access memory elements in cross-point arrays (2018-06-19),

11. 9837149 - Low read current architecture for memory (2017-12-05),

12. 9831425 - Two-terminal reversibly switchable memory device (2017-11-28),

13. 9806130 - Memory element with a reactive metal layer (2017-10-31),

14. 9570515 - Memory element with a reactive metal layer (2017-02-14),

15. 9368200 - Low read current architecture for memory (2016-06-14),

Darrell Rinerson - The Memory Genius with 100 Patents

Meet Darrell Rinerson, the man who has revolutionized the field of memory with his numerous patents. He is currently located in Cupertino, CA (US), and has been generating innovative ideas for the memory industry for years. Rinerson has an incredible record of 100 patents to his name, and his contributions to the field have been recognized worldwide.

Rinerson's latest patents are the "Two-terminal reversibly switchable memory device" and "Memory element with a reactive metal layer." The former provides a new, more efficient type of memory using mixed valence conductive oxides. The latter is a re-writeable and non-volatile memory device that includes a reactive metal layer and is capable of storing data in resistive states.

Over the years, Rinerson has worked with prestigious companies such as Unity Semiconductor Corporation and Hefei Reliance Memory Limited to provide them with groundbreaking ideas and products. He collaborated with Christophe Chevallier and Steven Longcor, who are his coworkers and fellow innovators.

His work has significantly impacted the industry, and it's worth noting that some of his patents have been licensed to several companies. Rinerson's contributions to the industry have not only benefited these companies, but they have also paved the way for newer technologies and products.

Innovation and patents are at the core of what we do at iDiyas. We believe that innovators such as Darrell Rinerson need to be celebrated for their contributions to their respective industries. We salute him for his remarkable achievements, and we hope that his work continues to inspire future generations of inventors.