The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Sep. 22, 2020
Hefei Reliance Memory Limited, Hefei, CN;
Christophe J. Chevallier, Palo Alto, CA (US);
Steve Kuo-Ren Hsia, San Jose, CA (US);
Wayne Kinney, Emmett, ID (US);
Steven Longcor, Mountain View, CA (US);
Darrell Rinerson, Cupertino, CA (US);
John Sanchez, Palo Alto, CA (US);
Philip F. S. Swab, Santa Rosa, CA (US);
Edmond R. Ward, Monte Sereno, CA (US);
Hefei Reliance Memory Limited, Hefei, CN;
Abstract
A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (ME) having tantalum. The ME including a first terminal, a second terminal, a first layer of a conductive metal oxide (CMO), and a second layer in direct contact with the first layer. The second layer and the first layer being operative to store at least one-bit of data as a plurality of resistive states, and the first and second layer are electrically in series with each other and with the first and second terminals.