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For the Inventor, By the Inventor

Mount Sereno, CA, United States of America

Edmond R Ward

This inventor holds 49 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Reversible Memory Devices. Top assignees: Unity Semiconductor Corporation, Hefei Reliance Memory Limited, Asml Holding N.v.. Active years: 1997-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Edmond R Ward. Retrieved from https://idiyas.com/inventor/edmond-r-ward

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 49 

% Patents Active = 77.6

 

Average Co-Inventor Count = 6.3

ph-index = 21

Forward Citations = 1,718(Granted Patents)


Location History:

  • Mount Sereno, CA (US) (2006)
  • Monte Sereno, CA (US) (1997 - 2023)

Company Filing History:

goldMedal36 out of 301 
 
Unity Semiconductor Corporation
 patents
silverMedal7 out of 76 
 
Hefei Reliance Memory Limited
 patents
bronzeMedal3 out of 631 
 
Asml Holding N.v.
 patents
4. 3 out of 47 
 
Silicon Valley Group, Inc.
 patents

Years Active: 1997-2023

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Areas of Expertise:
Two-Terminal Memory
Reversible Memory
Multi-Resistive States
Conductive Oxide Electrodes
NVRAM
Memory Array
Voltage Switchable Resistance
Cross Point Array
Reactive Metal Layer
Fabrication Methods
Fast Access Memory
High Density Memory
49 patents (USPTO):Explore Patents
1. 11672189 - Two-terminal reversibly switchable memory device (2023-06-06),
2. 11502249 - Memory element with a reactive metal layer (2022-11-15),
3. 11063214 - Two-terminal reversibly switchable memory device (2021-07-13),
4. 10833125 - Memory element with a reactive metal layer (2020-11-10),
5. 10680171 - Two-terminal reversibly switchable memory device (2020-06-09),
6. 10340312 - Memory element with a reactive metal layer (2019-07-02),
7. 10224480 - Two-terminal reversibly switchable memory device (2019-03-05),
8. 9831425 - Two-terminal reversibly switchable memory device (2017-11-28),
9. 9806130 - Memory element with a reactive metal layer (2017-10-31),
10. 9570515 - Memory element with a reactive metal layer (2017-02-14),
11. 9159913 - Two-terminal reversibly switchable memory device (2015-10-13),
12. 9159408 - Memory element with a reactive metal layer (2015-10-13),
13. 8675389 - Memory element with a reactive metal layer (2014-03-18),
14. 8611130 - Method for fabricating multi-resistive state memory devices (2013-12-17),
15. 8062942 - Method for fabricating multi-resistive state memory devices (2011-11-22),

Title: The Innovative Journey of Edmond R Ward

Introduction: Edmond R Ward, a visionary inventor based in Mount Sereno, CA, has made significant contributions to the world of innovations with his groundbreaking ideas and inventions.

Latest Patents: Edmond R Ward holds several patents in various fields, including technology, healthcare, and environmental sustainability. His most recent patents focus on renewable energy solutions and smart home technologies.

Career Highlights: Throughout his illustrious career, Edmond R Ward has been recognized for his inventive spirit and problem-solving abilities. He has received numerous awards for his contributions to the field of innovation and has been a keynote speaker at prestigious tech conferences worldwide.

Collaborations: Edmond R Ward has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life. His collaborative projects have resulted in cutting-edge products that have revolutionized their respective industries.

Conclusion: In conclusion, Edmond R Ward's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His work continues to inspire future generations of innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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