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For the Inventor, By the Inventor

Hefei, China

Hefei Reliance Memory Limited

Calculating rank
USPTO Granted Patents = 76


Forward Citations = 93

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32 inventors (with patents filed for the assignee):

goldMedal Zhichao Lu (31 out of 34 patents)

silverMedal Brent Steven Haukness (27 out of 127 patents)

bronzeMedal Gary Bela Bronner (19 out of 46 patents)

4.  Liang Zhao (14 out of 468 patents)

5.  Deepak Chandra Sekar (14 out of 288 patents)

6.  Wayne Frederick Ellis (9 out of 101 patents)

7.  Darrell Rinerson (7 out of 100 patents)

8.  Wayne I Kinney (7 out of 116 patents)

9.  Edmond R Ward (7 out of 49 patents)

10.  Christophe J Chevallier (7 out of 311 patents)

11.  Thomas Vogelsang (6 out of 175 patents)

12.  Jian Wu (5 out of 18 patents)

13.  Rene Meyer (5 out of 23 patents)

14.  Frederick Abbott Ware (5 out of 803 patents)

15.  Lawrence Schloss (4 out of 40 patents)


Core Competencies:
Resistive Memory
RRAM
Non-Volatile Memory
Analog Memory Cells
Memory Cell Structures
Memory Operations
Two-Terminal Memory
Voltage-Control Techniques
Embedded Memory
Memory Device Architecture
Fast Read Speed
Adaptive Write Conditions

76 patents:

1. 12451101 - Display driver system with embedded non-volatile memory (2025-10-21),
2. 12439609 - Process technique for embedded memory (2025-10-07),
3. 12433177 - Memory device having improved memory cell structures to prevent formation of voids therein (2025-09-30),
4. 12327587 - Method of RRAM write ramping voltage in intervals (2025-06-10),
5. 12266300 - Display driver integrated circuit having embedded resistive random access memory and display device having same (2025-04-01),
6. 12232335 - RRAM process integration scheme and cell structure with reduced masking operations (2025-02-18),
7. 12230309 - Dual-precision analog memory cell and array (2025-02-18),
8. 12144269 - Thermal field controlled electrical conductivity change device (2024-11-12),
9. 12142241 - Display driver system with embedded non-volatile memory (2024-11-12),
10. 12133477 - Resistive random access memory and method for operating same (2024-10-29),
11. 12027206 - Techniques for initializing resistive memory devices by applying voltages with different polarities (2024-07-02),
12. 11984163 - Processing unit with fast read speed memory device (2024-05-14),
13. 11967374 - Voltage-mode bit line precharge for random-access memory cells (2024-04-23),
14. 11963465 - Non-volatile memory structure with positioned doping (2024-04-16),
15. 11950519 - Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same (2024-04-02),
Company Overview
Hefei Reliance Memory Limited specializes in the development and innovation of resistive memory technology, focusing on resistive random-access memory (RRAM) solutions. The company is dedicated to advancing non-volatile memory systems, emphasizing analog memory cells and their structures. Its research encompasses various memory operations and voltage-control techniques, positioning it as a key player in the evolving landscape of memory technologies. Based in Hefei, China, the organization contributes to the global advancement of memory solutions.
Profile summary synthesized from public USPTO records and patent filings.

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USPTO Data Jan 1 1976 - Nov 3 2026

76 Patents

#7 in Hefei

#427 in China

#9,897 in the World

Hefei, CN
Hefei, China

Hefei Reliance Memory Limited

Forward Citations = 93

32 inventors:

goldMedal Zhichao Lu (31 out of 34 patents)

silverMedal Brent Steven Haukness (27 out of 127 patents)

bronzeMedal Gary Bela Bronner (19 out of 46 patents)

4.  Liang Zhao (14 out of 468 patents)

5.  Deepak Chandra Sekar (14 out of 288 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Hefei Reliance Memory Limited. Retrieved from https://idiyas.com/company/hefei-reliance-memory

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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