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Hefei Reliance Memory Limited

USPTO Granted Patents = 76

EPO Patents = 2

Forward Citations = 87

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32 inventors (with patents filed for the assignee):

Zhichao Lu (31 out of 34 patents)

Brent Steven Haukness (27 out of 122 patents)

Gary Bela Bronner (19 out of 45 patents)

4. Liang Zhao (14 out of 366 patents)

5. Deepak Chandra Sekar (14 out of 285 patents)

6. Wayne Frederick Ellis (9 out of 99 patents)

7. Darrell Rinerson (7 out of 100 patents)

8. Wayne I Kinney (7 out of 116 patents)

9. Edmond R Ward (7 out of 49 patents)

10. Christophe J Chevallier (7 out of 311 patents)

11. Thomas Vogelsang (6 out of 161 patents)

12. Jian Wu (5 out of 16 patents)

13. Rene Meyer (5 out of 23 patents)

14. Frederick Abbott Ware (5 out of 777 patents)

15. Lawrence Schloss (4 out of 38 patents)

Core Competencies:

Embedded Non-Volatile Memory

Resistive Random Access Memory

Dual-Precision Analog Memory

Memory Cell Structures

Voltage-Mode Bit Line Precharge

Neural Network Inference Accelerator

Two-Terminal Memory Devices

Adaptive Memory Cell Conditions

Multi-Layered Conductive Metal Oxides

Fast Read Speed Memory

RRAM Process Integration

Mixed Digital-Analog Memory

76 patents: Sort by Forward Citations

1. 12451101 - Display driver system with embedded non-volatile memory (2025-10-21),

2. 12439609 - Process technique for embedded memory (2025-10-07),

3. 12433177 - Memory device having improved memory cell structures to prevent formation of voids therein (2025-09-30),

4. 12327587 - Method of RRAM write ramping voltage in intervals (2025-06-10),

5. 12266300 - Display driver integrated circuit having embedded resistive random access memory and display device having same (2025-04-01),

6. 12232335 - RRAM process integration scheme and cell structure with reduced masking operations (2025-02-18),

7. 12230309 - Dual-precision analog memory cell and array (2025-02-18),

8. 12144269 - Thermal field controlled electrical conductivity change device (2024-11-12),

9. 12142241 - Display driver system with embedded non-volatile memory (2024-11-12),

10. 12133477 - Resistive random access memory and method for operating same (2024-10-29),

11. 12027206 - Techniques for initializing resistive memory devices by applying voltages with different polarities (2024-07-02),

12. 11984163 - Processing unit with fast read speed memory device (2024-05-14),

13. 11967374 - Voltage-mode bit line precharge for random-access memory cells (2024-04-23),

14. 11963465 - Non-volatile memory structure with positioned doping (2024-04-16),

15. 11950519 - Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same (2024-04-02),

Hefei Reliance Memory Limited is a leading provider of memory solutions, specializing in the design, development, and manufacturing of high-performance memory products. With a strong focus on research and innovation, we deliver cutting-edge solutions for various industries including telecommunications, automotive, consumer electronics, and more. Our commitment to quality, reliability, and customer satisfaction has made us a trusted partner for companies worldwide. Visit our website to learn more about our extensive product portfolio and how we can meet your memory requirements.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

76 Patents

#5 in Hefei

#379 in China

#9,493 in the World

Hefei Reliance Memory Limited

Forward Citations = 87

32 inventors:

Zhichao Lu (31 out of 34 patents)

Brent Steven Haukness (27 out of 122 patents)

Gary Bela Bronner (19 out of 45 patents)

4. Liang Zhao (14 out of 366 patents)

5. Deepak Chandra Sekar (14 out of 285 patents)

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