The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Dec. 02, 2021
Applicant:
Hefei Reliance Memory Limited, Hefei, CN;
Inventors:
Zhiqiang Wei, Pleasanton, CA (US);
Zhichao Lu, San Jose, CA (US);
Assignee:
Hefei Reliance Memory Limited, Hefei, CN;
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/253 (2023.02); G11C 13/0002 (2013.01); H10B 63/30 (2023.02); H10N 70/011 (2023.02); H10N 70/061 (2023.02); H10N 70/8265 (2023.02); H10N 70/841 (2023.02); H10N 70/883 (2023.02);
Abstract
A non-volatile memory cell includes a bottom electrode, a top electrode having a conductive material, a resistive layer interposed between the bottom electrode and the top electrode, and side portions covering sides of the top electrode and the resistive layer. The side portions contain an oxide of the conductive material. The non-volatile memory cell further includes a contact wire disposed on the top electrode. A width of the contact wire is less than a width between lateral outer surfaces of the side portions.