The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Jul. 26, 2022
Applicant:
Hefei Reliance Memory Limited, Hefei, CN;
Inventors:
Assignee:
Hefei Reliance Memory Limited, Hefei, CN;
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/245 (2023.02); G11C 13/0007 (2013.01); G11C 13/0011 (2013.01); H10N 70/826 (2023.02); H10N 70/883 (2023.02);
Abstract
A resistive random access memory (RRAM) and a method for operating the RRAM are disclosed. The RRAM includes at least two successively stacked conductive layers and a resistive switching layer situated between every adjacent two conductive layers, wherein a migration interface with an interface effect is formed at each interface between one conductive layer and the resistive switching layer in contact therewith, wherein the migration interface regulates, by the interface effect, vacancies formed in the resistive switching layer under the effect of an electrical signal. The regulation includes at least one of absorption, migration and diffusion.