Zezhi Chen

Title: Zezhi Chen: Innovator in Embedded Memory Technology

Introduction

Zezhi Chen is a prominent inventor based in Hefei, China. He has made significant contributions to the field of memory technology, holding 2 patents that showcase his innovative approach to embedded memory systems. His work is characterized by a focus on enhancing the efficiency and functionality of memory devices.

Latest Patents

Zezhi Chen's latest patents include a groundbreaking process technique for embedded memory. This invention involves a single integrated circuit that comprises both a memory region and a non-memory region. The memory region features a first conductive structure, a memory element, and a first via, while the non-memory region includes a second conductive structure and a second via. The innovative aspect of this patent lies in the use of a first photolithography process that employs a first photomask, allowing for the effective configuration of the first conductive structure as a bottom electrode in the memory region. Additionally, he has developed a resistive random access memory (RRAM) that includes successively stacked conductive layers and a resistive switching layer. This RRAM design regulates vacancies formed in the resistive switching layer through a migration interface, enhancing its operational efficiency.

Career Highlights

Zezhi Chen is currently associated with Hefei Reliance Memory Limited, where he continues to push the boundaries of memory technology. His work has garnered attention for its innovative solutions and practical applications in the industry.

Collaborations

Zezhi Chen collaborates with talented individuals such as Zhichao Lu and Liang Zhao, contributing to a dynamic work environment that fosters innovation and creativity.

Conclusion

Zezhi Chen's contributions to embedded memory technology reflect his dedication to advancing the field. His patents not only demonstrate his inventive spirit but also pave the way for future developments in memory systems.