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Wayne I Kinney

This inventor holds 116 USPTO granted patents and 6 published patent applications and 10 EPO patents, primarily in Ferroelectric Memory (CPC class H01L45-1233). Top assignees: Micron Technology Incorporated, Unity Semiconductor Corporation, Hefei Reliance Memory Limited. Active years: 1994-2025.

USPTO Granted Patents = 116 (Patent Applications = 6)

% Patents Active = 80.2

EPO Patents = 10 (Patent Applications = 9)

Average Co-Inventor Count = 3.4

ph-index = 28

Forward Citations = 2,587(Granted Patents)

Forward Citations (Not Self Cited) = 2,333(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Emmett, CA (US) (2012 - 2014)
Boise, ID (US) (1994 - 2024)
Emmett, ID (US) (2004 - 2024)

Company Filing History:

53 out of 39,149

Micron Technology Incorporated

patents

51 out of 301

Unity Semiconductor Corporation

patents

7 out of 76

Hefei Reliance Memory Limited

patents

4. 4 out of 57

Ovonyx Memory Technology, LLC

patents

5. 1 out of 156

Micron Semiconductor, Inc.

patents

Years Active: 1994-2025

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Areas of Expertise:

Ferroelectric Transistors

Memory Arrays

Crystalline Materials

Magnetic Structures

Two-Terminal Devices

Non-Volatile Memory

Semiconductor Devices

Reactive Metal Layer

Selective Reading

Integrated Assemblies

Conductive Metal Oxide

Fast Pulse Operation

116 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12223994 - Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays (2025-02-11),

2. 12080329 - Ferroelectric devices and ferroelectric memory cells (2024-09-03),

3. 12057472 - Devices comprising crystalline materials (2024-08-06),

4. 12048167 - Electronic devices including a seed region and magnetic regions (2024-07-23),

5. 11955156 - Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays (2024-04-09),

6. 11789796 - Selective reading of memory with improved accuracy (2023-10-17),

7. 11672189 - Two-terminal reversibly switchable memory device (2023-06-06),

8. 11594611 - Transistors, memory cells and semiconductor constructions (2023-02-28),

9. 11532699 - Devices comprising crystalline materials and related systems (2022-12-20),

10. 11515331 - Integrated assemblies comprising ferroelectric transistors and non-ferroelectric transistors (2022-11-29),

11. 11502249 - Memory element with a reactive metal layer (2022-11-15),

12. 11398263 - Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods (2022-07-26),

13. 11393872 - Electronic devices with seed and magnetic regions and methods of fabrication (2022-07-19),

14. 11379286 - Selective reading of memory with improved accuracy (2022-07-05),

15. 11276449 - Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arrays (2022-03-15),

Title: Wayne I Kinney: A Visionary in Ferroelectric Technology

Introduction

Wayne I Kinney, based in Boise, ID, has made significant contributions to the field of semiconductor technology through his inventive spirit. With a remarkable portfolio of 116 patents, he has established himself as a leader in innovations related to memory arrays and ferroelectric transistors.

Latest Patents

Kinney's latest patents focus on advanced memory arrays and innovative methods of reading and writing in relation to memory cells. Notably, one of his patent embodiments includes a ferroelectric transistor designed with a multi-layered container structure, enhancing the performance and efficiency of memory cells. His work also delves into the intricacies of ferroelectric materials, particularly utilizing oxides of hafnium and zirconium, doped with bismuth, to create robust semiconductor structures. These inventions promise to uplift the capabilities of electronic systems and memory devices.

Career Highlights

Throughout his career, Kinney has held pivotal roles in prominent companies such as Micron Technology and Unity Semiconductor Corporation. His deep understanding of semiconductor technology and dedication to research have driven numerous advancements within these organizations. His efforts have contributed to critical improvements in how memory technologies function, pushing the boundaries of what is possible in data storage and processing.

Collaborations

Kinney's journey in technology has been enhanced by collaborative efforts with talented individuals in the field. He has worked alongside esteemed coworkers like Darrell Rinerson and Christophe J Chevallier, pooling their collective expertise to advance cutting-edge innovations in semiconductor technology.

Conclusion

Wayne I Kinney's influence on ferroelectric devices and memory technology exemplifies the spirit of innovation. Through his extensive patent portfolio and collaborative ventures, he continues to pave the way for future advancements in semiconductor technologies, reinforcing the importance of intellectual contributions in driving progress in the industry.

Profile summary based on public USPTO records.

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