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For the Inventor, By the Inventor

Alexandria, VA, United States of America

Ovonyx Memory Technology, LLC


USPTO Granted Patents = 57

% Expired Patents = 61.4


Forward Citations = 51

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31 inventors (with patents filed for the assignee):

goldMedal Jun Liu (20 out of 284 patents)

silverMedal Michael P Violette (7 out of 123 patents)

bronzeMedal Fabio Pellizzer (6 out of 292 patents)

4.  Innocenzo Tortorelli (6 out of 150 patents)

5.  Umberto Di Vincenzo (5 out of 115 patents)

6.  Carlo Lisi (5 out of 18 patents)

7.  Joseph F Brooks (5 out of 39 patents)

8.  Nicholas T Hendrickson (5 out of 39 patents)

9.  Gerald J Barkley (5 out of 31 patents)

10.  John T Moore (5 out of 199 patents)

11.  Wayne I Kinney (4 out of 116 patents)

12.  Gurtej S Sandhu (4 out of 1,439 patents)

13.  David H Wells (3 out of 161 patents)

14.  Kristy A Campbell (3 out of 128 patents)

15.  Ilya V Karpov (3 out of 51 patents)


Core Competencies:
Selective Reading
Variable Resistance Memory
Semiconductor Memory Device
Power Management
Phase Change Material
Memory Cell Array
Resistive Memory Architectures
Nanoparticle Electrode
Cross-Point Array
Electrically Floating Body Transistor
Memory Programming
Biasing Schemes

57 patents:

1. 11789796 - Selective reading of memory with improved accuracy (2023-10-17),
2. 11763885 - Variable resistance memory with lattice array using enclosing transistors (2023-09-19),
3. 11742307 - Semiconductor memory device structure (2023-08-29),
4. 11670343 - Apparatus and methods to provide power management for memory devices (2023-06-06),
5. 11379286 - Selective reading of memory with improved accuracy (2022-07-05),
6. 11349072 - Resistive memory architectures with multiple memory cells per access device (2022-05-31),
7. 11264344 - Semiconductor memory device structure (2022-03-01),
8. 11158796 - Resistance variable memory device with nanoparticle electrode and method of fabrication (2021-10-26),
9. 11120873 - Devices and methods to program a memory cell (2021-09-14),
10. 11114135 - Apparatus and methods to provide power management for memory devices (2021-09-07),
11. 11081486 - Integrated circuit having memory cell array including barriers, and method of manufacturing same (2021-08-03),
12. 11062771 - Variable resistance memory with lattice array using enclosing transistors (2021-07-13),
13. 11050019 - Memory devices including phase change material elements (2021-06-29),
14. 11031553 - Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references (2021-06-08),
15. 11031069 - Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same (2021-06-08),
Ovonyx Memory Technology, LLC, based in Alexandria, VA, specializes in advanced semiconductor memory solutions. The company focuses on innovative technologies such as selective reading and variable resistance memory, which are pivotal for enhancing memory device performance. Their expertise extends to power management and the development of resistive memory architectures, utilizing phase change materials and nanoparticle electrodes to create efficient memory cell arrays. Ovonyx is committed to pushing the boundaries of memory technology to meet the evolving demands of the electronics industry.
Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Sep 29 2026

57 Patents

#1 in Alexandria, VA

#99 in Virginia

#6,238 in US

#12,542 in the World

Alexandria, VA (US)
Alexandria, VA, United States of America

Ovonyx Memory Technology, LLC

Forward Citations = 51

31 inventors:

goldMedal Jun Liu (20 out of 284 patents)

silverMedal Michael P Violette (7 out of 123 patents)

bronzeMedal Fabio Pellizzer (6 out of 292 patents)

4.  Innocenzo Tortorelli (6 out of 150 patents)

5.  Umberto Di Vincenzo (5 out of 115 patents)

Please report any incorrect information to [email protected]
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