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For the Inventor, By the Inventor

Alexandria, VA, United States of America

Ovonyx Memory Technology, LLC


USPTO Granted Patents = 57


Forward Citations = 47

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31 inventors (with patents filed for the assignee):

goldMedal Jun Liu (20 out of 284 patents)

silverMedal Michael P Violette (7 out of 123 patents)

bronzeMedal Fabio Pellizzer (6 out of 289 patents)

4.  Innocenzo Tortorelli (6 out of 147 patents)

5.  Umberto Di Vincenzo (5 out of 109 patents)

6.  Carlo Lisi (5 out of 18 patents)

7.  Joseph F Brooks (5 out of 39 patents)

8.  Nicholas T Hendrickson (5 out of 38 patents)

9.  Gerald J Barkley (5 out of 31 patents)

10.  John T Moore (5 out of 199 patents)

11.  Wayne I Kinney (4 out of 116 patents)

12.  Gurtej S Sandhu (4 out of 1,435 patents)

13.  David H Wells (3 out of 156 patents)

14.  Kristy A Campbell (3 out of 128 patents)

15.  Ilya V Karpov (3 out of 49 patents)


Core Competencies:
Selective Reading
Variable Resistance Memory
Semiconductor Memory Device
Power Management
Resistive Memory Architectures
Phase Change Memory
Memory Cell Array
Nanoparticle Electrode
Cross-Point Array
Biasing Schemes
Floating Body Transistor
Memory Device Fabrication

57 patents:

1. 11789796 - Selective reading of memory with improved accuracy (2023-10-17),
2. 11763885 - Variable resistance memory with lattice array using enclosing transistors (2023-09-19),
3. 11742307 - Semiconductor memory device structure (2023-08-29),
4. 11670343 - Apparatus and methods to provide power management for memory devices (2023-06-06),
5. 11379286 - Selective reading of memory with improved accuracy (2022-07-05),
6. 11349072 - Resistive memory architectures with multiple memory cells per access device (2022-05-31),
7. 11264344 - Semiconductor memory device structure (2022-03-01),
8. 11158796 - Resistance variable memory device with nanoparticle electrode and method of fabrication (2021-10-26),
9. 11120873 - Devices and methods to program a memory cell (2021-09-14),
10. 11114135 - Apparatus and methods to provide power management for memory devices (2021-09-07),
11. 11081486 - Integrated circuit having memory cell array including barriers, and method of manufacturing same (2021-08-03),
12. 11062771 - Variable resistance memory with lattice array using enclosing transistors (2021-07-13),
13. 11050019 - Memory devices including phase change material elements (2021-06-29),
14. 11031553 - Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references (2021-06-08),
15. 11031069 - Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same (2021-06-08),
OVONYX Memory Technology, LLC is a leading research and development company specializing in phase-change memory (PCM) technology. PCM is an innovative non-volatile memory technology that offers high-density storage and fast access times. OVONYX focuses on developing PCM solutions for various applications such as data storage, mobile devices, and embedded systems. With years of expertise in PCM, OVONYX is dedicated to advancing the field of memory technology and providing cutting-edge solutions for the digital age.
This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Dec 30 2025

57 Patents

#3 in Alexandria, VA

#104 in Virginia

#6,042 in US

#12,168 in the World

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Alexandria, VA, United States of America

Ovonyx Memory Technology, LLC

Forward Citations = 47

31 inventors:

goldMedal Jun Liu (20 out of 284 patents)

silverMedal Michael P Violette (7 out of 123 patents)

bronzeMedal Fabio Pellizzer (6 out of 289 patents)

4.  Innocenzo Tortorelli (6 out of 147 patents)

5.  Umberto Di Vincenzo (5 out of 109 patents)

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