The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Jun. 17, 2022
Applicant:

Ovonyx Memory Technology, Llc, Alexandria, VA (US);

Inventors:

Wayne Kinney, Emmett, ID (US);

Gurtej S. Sandhu, Boise, ID (US);

Assignee:

Ovonyx Memory Technology, LLC, Alexandria, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/07 (2006.01); G11C 29/04 (2006.01); G11C 11/16 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G06F 11/0751 (2013.01); G06F 11/0727 (2013.01); G11C 11/16 (2013.01); G11C 11/1673 (2013.01); G11C 11/1677 (2013.01); G11C 29/021 (2013.01); G11C 2029/0411 (2013.01);
Abstract

This disclosure relates to selectively performing a read with increased accuracy, such as a self-reference read, from a memory. In one aspect, data is read from memory cells, such as magnetoresistive random access memory (MRAM) cells, of a memory array. In response to detecting a condition associated with reading from the memory cells, a self-reference read can be performed from at least one of the memory cells. For instance, the condition can indicate that data read from the memory cells is uncorrectable via decoding of error correction codes (ECC). Selectively performing self-reference reads can reduce power consumption and/or latency associated with reading from the memory compared to always performing self-reference reads.


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