The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Jul. 15, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Albert Liao, Boise, ID (US);
Wayne I. Kinney, Boise, ID (US);
Yi Fang Lee, Boise, ID (US);
Manzar Siddik, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 27/11507 (2017.01); H01L 49/02 (2006.01); H01L 27/11509 (2017.01);
U.S. Cl.
CPC ...
G11C 11/221 (2013.01); G11C 11/2297 (2013.01); H01L 27/11507 (2013.01); H01L 27/11509 (2013.01); H01L 28/40 (2013.01); H01L 28/55 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01);
Abstract
A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.