The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Aug. 26, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Wayne I. Kinney, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11597 (2017.01); H01L 27/11592 (2017.01); H01L 23/528 (2006.01); H01L 27/1159 (2017.01); G11C 11/22 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 27/1157 (2017.01); H01L 27/11514 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11597 (2013.01); G11C 11/223 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01); H01L 23/528 (2013.01); H01L 27/1157 (2013.01); H01L 27/1159 (2013.01); H01L 27/11514 (2013.01); H01L 27/11582 (2013.01); H01L 27/11592 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/42392 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09);
Abstract

Some embodiments include an integrated assembly having a semiconductor structure extending from a first wiring to a second wiring. A ferroelectric transistor includes a first transistor gate adjacent a first region of the semiconductor structure. A first non-ferroelectric transistor includes a second transistor gate adjacent a second region of the semiconductor structure. The second region of the semiconductor structure is between the first region of the semiconductor structure and the first wiring. A second non-ferroelectric transistor includes a third transistor gate adjacent a third region of the semiconductor structure. The third region of the semiconductor structure is between the first region of the semiconductor structure and the second wiring.


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