The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Sep. 20, 2022
Applicant:
Hefei Reliance Memory Limited, Hefei, CN;
Inventors:
Zhichao Lu, San Jose, CA (US);
Brent Haukness, Monte Sereno, CA (US);
Gary Bronner, Los Altos, CA (US);
Assignee:
Hefei Reliance Memory Limited, Hefei, CN;
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0007 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0038 (2013.01); G11C 13/0064 (2013.01); G11C 29/12 (2013.01); G11C 2013/0073 (2013.01); G11C 2013/0083 (2013.01);
Abstract
The embodiments herein describe technologies of initializing resistive memory devices (e.g., non-volatile and volatile memory devices). In one method, a first voltage is applied across a resistance change material of a memory cell to form an initial filament and multiple cycles are performed to condition the initial filament. Each of the multiple cycles includes: applying a second voltage with a first polarity across the resistance change material; and applying a third voltage with a second polarity across the resistance change material.