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For the Inventor, By the Inventor

San Jose, CA, United States of America

Steve Kuo-Ren Hsia

USPTO Granted Patents = 36 

Average Co-Inventor Count = 5.9

ph-index = 19

Forward Citations = 1,539(Granted Patents)


Company Filing History:

goldMedal33 out of 299 
 
Unity Semiconductor Corporation
 patents
silverMedal3 out of 76 
 
Hefei Reliance Memory Limited
 patents

Years Active: 2004-2022

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36 patents (USPTO):Explore Patents
1. 11502249 - Memory element with a reactive metal layer (2022-11-15),
2. 10833125 - Memory element with a reactive metal layer (2020-11-10),
3. 10340312 - Memory element with a reactive metal layer (2019-07-02),
4. 9806130 - Memory element with a reactive metal layer (2017-10-31),
5. 9570515 - Memory element with a reactive metal layer (2017-02-14),
6. 9159408 - Memory element with a reactive metal layer (2015-10-13),
7. 8675389 - Memory element with a reactive metal layer (2014-03-18),
8. 8611130 - Method for fabricating multi-resistive state memory devices (2013-12-17),
9. 8062942 - Method for fabricating multi-resistive state memory devices (2011-11-22),
10. 7889539 - Multi-resistive state memory device with conductive oxide electrodes (2011-02-15),
11. 7884349 - Selection device for re-writable memory (2011-02-08),
12. 7847330 - Four vertically stacked memory layers in a non-volatile re-writeable memory device (2010-12-07),
13. 7633790 - Multi-resistive state memory device with conductive oxide electrodes (2009-12-15),
14. 7528405 - Conductive memory stack with sidewall (2009-05-05),
15. 7439082 - Conductive memory stack with non-uniform width (2008-10-21),

Title: Steve Kuo-Ren Hsia: An Innovative Mind in Non-Volatile Memory Technology

Introduction

Steve Kuo-Ren Hsia is a distinguished inventor based in San Jose, CA, recognized for his significant contributions to the field of non-volatile memory technology. With an impressive portfolio of 36 patents, Hsia has played a pivotal role in advancing memory device design and functionality.

Latest Patents

Among his notable inventions is a re-writeable non-volatile memory device that features a two-terminal memory element (ME) utilizing tantalum. This innovative ME consists of a first terminal, a second terminal, a first layer of conductive metal oxide (CMO), and a second layer that directly contacts the first layer. The design allows for the storage of at least one bit of data as a plurality of resistive states, with the layers arranged in electrical series, providing enhanced functionality and reliability in data storage applications.

Career Highlights

Hsia has a rich career, having worked with prominent companies such as Unity Semiconductor Corporation and Hefei Reliance Memory Limited. His expertise and innovative approaches have influenced numerous advancements in memory technology, showcasing his ability to blend theoretical knowledge with practical applications.

Collaborations

Throughout his career, Hsia has collaborated with talented professionals, including Darrell Rinerson and Steven W Longcor. These partnerships have facilitated the exchange of ideas and spurred further innovations within the industry.

Conclusion

Steve Kuo-Ren Hsia remains a key figure in the world of memory technology, consistently pushing the boundaries of what is possible. His contributions through patents and collaborations underscore his status as a leading inventor, paving the way for future developments in the field of non-volatile memory devices.

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