The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Oct. 29, 2014
Applicant:

Unity Semiconductor Corporation, Sunnyvale, CA (US);

Inventors:

Chang Hua Siau, Saratoga, CA (US);

Christophe Chevallier, Palo Alto, CA (US);

Darrell Rinerson, Cupertino, CA (US);

Seow Fong Lim, Fremont, CA (US);

Sri Rama Namala, San Jose, CA (US);

Assignee:

Unity Semiconductor Corporation, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 8/00 (2006.01); G11C 11/00 (2006.01); H01L 21/82 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 5/025 (2013.01); G11C 5/02 (2013.01); G11C 8/00 (2013.01); G11C 11/00 (2013.01); G11C 13/0002 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0023 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0061 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 21/82 (2013.01); H01L 45/16 (2013.01); G11C 2213/77 (2013.01); H01L 27/2481 (2013.01);
Abstract

Embodiments relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to implement a memory architecture that includes local bit lines for accessing subsets of memory elements, such as memory elements based on third dimensional memory technology. In at least some embodiments, an integrated circuit includes a cross-point memory array formed above a logic layer. The cross-point memory array includes X-lines and Y-lines, of which at least one Y-line includes groups of Y-line portions. Each of the Y-line portions can be arranged in parallel with other Y-line portions within a group of the Y-line portions. Also included are memory elements disposed between a subset of the X-lines and the group of the Y-line portions. In some embodiments, a decoder is configured to select a Y-line portion from the group of Y-line portions to access a subset of the memory elements.


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