Cortlandt Manor, NY, United States of America

Ricardo Alves Donaton

This inventor holds 26 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Technology. Top assignees: International Business Machines Corporation, Imec Vzw. Active years: 2000-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ricardo Alves Donaton. Retrieved from https://idiyas.com/inventor/ricardo-alves-donaton

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 (Patent Applications = 2)

% Patents Active = 53.8

Average Co-Inventor Count = 4.8

ph-index = 8

Forward Citations = 311(Granted Patents)

Location History:

Heverlee, BE (2000 - 2001)
Hopewell Junction, NY (US) (2012)
Cortlandt Manor, NY (US) (2005 - 2023)

Company Filing History:

23 out of 166,351

International Business Machines Corporation

Years Active: 2000-2023

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Areas of Expertise:

Microwave-Optical Transducers

Deep Trench Capacitor

Hybrid Bonding Interface

Gate Height Scaling

High-k/Metal Gate

Stress-Enhance MOSFET

Parasitic Gate Capacitance

Electronics Structures

Anisotropic Etching

Silicon Germanium Devices

Sacrificial Multi-Layer Hardmask

Nitrogen Plasma Process

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11657314 - Microwave-to-optical quantum transducers (2023-05-23),

2. 10707217 - Semiconductor structures with deep trench capacitor and methods of manufacture (2020-07-07),

3. 10037998 - Semiconductor structures with deep trench capacitor and methods of manufacture (2018-07-31),

4. 9679917 - Semiconductor structures with deep trench capacitor and methods of manufacture (2017-06-13),

5. 9653535 - DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods (2017-05-16),

6. 9496329 - DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods (2016-11-15),

7. 9299766 - DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods (2016-03-29),

8. 8349729 - Hybrid bonding interface for 3-dimensional chip integration (2013-01-08),

9. 8227870 - Method and structure for gate height scaling with high-k/metal gate technology (2012-07-24),

10. 8227307 - Method for removing threshold voltage adjusting layer with external acid diffusion process (2012-07-24),

11. 8159060 - Hybrid bonding interface for 3-dimensional chip integration (2012-04-17),

12. 8138037 - Method and structure for gate height scaling with high-k/metal gate technology (2012-03-20),

13. 7947907 - Electronics structures using a sacrificial multi-layer hardmask scheme (2011-05-24),

14. 7875511 - CMOS structure including differential channel stressing layer compositions (2011-01-25),

15. 7863123 - Direct contact between high-κ/metal gate and wiring process flow (2011-01-04),

Title: Inventor Spotlight: Ricardo Alves Donaton

Introduction

Ricardo Alves Donaton is a prolific inventor based in Cortlandt Manor, NY, with a remarkable portfolio of 26 patents. His contributions to the field of technology, particularly in quantum transducers and semiconductor structures, demonstrate his innovative spirit and expertise.

Latest Patents

Among his recent patents, Donaton has developed novel techniques concerning microwave-to-optical quantum transducers. One embodiment involves an apparatus featuring a microwave resonator situated on a dielectric substrate, positioned adjacent to an optical resonator. This design includes a photon barrier structure that effectively isolates the microwave resonator from optical photons in the surrounding dielectric substrate.

Another significant innovation by Donaton involves semiconductor structures with deep trench capacitors and methods of manufacture. This patent details the formation of integrated FinFET structures and deep trench capacitor architectures on silicon-on-insulator (SOI) wafers. His methods include creating composite fin structures and protective linings that ensure the integrity of conductive materials during production processes.

Career Highlights

Donaton has made significant strides in his career, having worked for notable organizations including the International Business Machines Corporation (IBM) and Interuniversitair Microelektronica Centrum (imec). His roles at these institutions have allowed him to develop cutting-edge technologies and contribute to advancements in the field.

Collaborations

Over the years, Donaton has collaborated with esteemed colleagues such as William K. Henson and Dureseti Chidambarrao. These partnerships have enriched his work and fostered a collaborative spirit in the pursuit of innovative solutions.

Conclusion

With 26 patents to his name and groundbreaking advancements in quantum technology and semiconductor engineering, Ricardo Alves Donaton stands out as a leading inventor. His work continues to influence the tech industry and exemplifies the essence of innovation.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: