The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Apr. 01, 2014
International Business Machines Corporation, Armonk, NY (US);
Nicolas L. Breil, Wappingers Falls, NY (US);
Ricardo A. Donaton, Cortlandt Manor, NY (US);
Dong Hun Kang, Hopewell Junction, NY (US);
Herbert L. Ho, New Windsor, NY (US);
Rishikesh Krishnan, Painted Post, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; enlarging a width of a lower portion of the deep trench to be wider than a width of the rest of the deep trench; epitaxially forming a compressive stress layer in the lower portion of the deep trench; forming a metal-insulator-metal (MIM) stack within the lower portion of the deep trench; and filling a remaining portion of the deep trench with a semiconductor. Alternatively to forming the compressive stress layer or in addition thereto, a silicide may be formed by co-deposition of a refractory metal and silicon.