The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Jan. 19, 2009
Huiming Bu, Millwood, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Ricardo A. Donaton, Cortlandt Manor, NY (US);
Naim Moumen, Walden, NY (US);
Hongwen Yan, Somers, NY (US);
Huiming Bu, Millwood, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Ricardo A. Donaton, Cortlandt Manor, NY (US);
Naim Moumen, Walden, NY (US);
Hongwen Yan, Somers, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A low resistance contact is formed to a metal gate or a transistor including a High-κ gate dielectric in a high integration density integrated circuit by applying a liner over a gate stack, applying a fill material between the gate stacks, planarizing the fill material to support high-resolution lithography, etching the fill material and the liner selectively to each other to form vias and filling the vias with a metal, metal alloy or conductive metal compound such as titanium nitride.