The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Feb. 02, 2012
Michael P. Chudzik, Danbury, CT (US);
Ricardo A. Donaton, Cortlandt Manor, NY (US);
William K. Henson, Beacon, NY (US);
Yue Liang, Beacon, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Ricardo A. Donaton, Cortlandt Manor, NY (US);
William K. Henson, Beacon, NY (US);
Yue Liang, Beacon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and structure to scale metal gate height in high-k/metal gate transistors. A method includes forming a dummy gate and at least one polysilicon feature, all of which are formed from a same polysilicon layer and wherein the dummy gate is formed over a gate metal layer associated with a transistor. The method also includes selectively removing the dummy gate while protecting the at least one polysilicon feature. The method further includes forming a gate contact on the gate metal layer to thereby form a metal gate having a height that is less than half a height of the at least one polysilicon feature.