William K Henson

USPTO Granted Patents = 55 (Patent Applications = 3)

EPO Patents = 3 (Patent Applications = 2)

Average Co-Inventor Count = 3.8

ph-index = 10

Forward Citations = 331(Granted Patents)

DiyaCoin

= 0.16

Inventors with similar research interests:

Location History:

Poughkeepsie, NY (US) (2007 - 2009)
Peekskill, NY (US) (2007 - 2012)
Peeksill, NY (US) (2012)
Beacon, NY (US) (2009 - 2016)

Company Filing History:

55 out of 164,108

International Business Machines Corporation

where one patent can have more than one assignee

Years Active: 2007-2016

where 'Filed Patents' based on already Granted Patents

55 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9252146 - Work function adjustment by carbon implant in semiconductor devices including gate structure (2016-02-02),

2. 9082877 - Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor (2015-07-14),

3. 9040399 - Threshold voltage adjustment for thin body MOSFETs (2015-05-26),

4. 8962417 - Method and structure for pFET junction profile with SiGe channel (2015-02-24),

5. 8946721 - Structure and method for using high-K material as an etch stop layer in dual stress layer process (2015-02-03),

6. 8803243 - Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor (2014-08-12),

7. 8729637 - Work function adjustment by carbon implant in semiconductor devices including gate structure (2014-05-20),

8. 8728925 - Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (HKMG) (2014-05-20),

9. 8673757 - Structure and method for using high-k material as an etch stop layer in dual stress layer process (2014-03-18),

10. 8659054 - Method and structure for pFET junction profile with SiGe channel (2014-02-25),

11. 8598009 - Self-aligned embedded SiGe structure and method of manufacturing the same (2013-12-03),

12. 8575709 - High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof (2013-11-05),

13. 8507992 - High-K metal gate CMOS (2013-08-13),

14. 8354309 - Method of providing threshold voltage adjustment through gate dielectric stack modification (2013-01-15),

15. 8350341 - Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (HKMG) (2013-01-08),

Title: The Innovative Mind of William K Henson

Introduction: William K Henson, a pioneering inventor hailing from Beacon, NY, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: William K Henson's latest patents include a revolutionary drone technology that has the potential to transform the way aerial photography is conducted. This patent showcases his forward-thinking approach to problem-solving and his commitment to pushing the boundaries of what is possible.

Career Highlights: Throughout his illustrious career, William K Henson has been at the forefront of technological advancements. His work in the field of renewable energy has led to the development of innovative solutions that have the potential to shape the future of sustainable energy production. Additionally, his contributions to the field of artificial intelligence have paved the way for new applications in various industries.

Collaborations: William K Henson has collaborated with some of the brightest minds in the industry, including leading researchers, engineers, and scientists. His collaborative spirit and ability to work effectively in multidisciplinary teams have been instrumental in the success of many of his projects.

Conclusion: In conclusion, William K Henson's passion for innovation and his relentless drive to create have established him as a trailblazer in the world of technology. His inventive spirit continues to inspire others to think outside the box and pursue their own creative endeavors.

This text is generated by artificial intelligence and may not be accurate.