The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Mar. 15, 2011
Renee T. MO, Briarcliff Manor, NY (US);
Huiming Bu, Glenmont, NY (US);
Michael P. Chudzik, Danbury, CT (US);
William K. Henson, Beacon, NY (US);
Mukesh V. Khare, Wappingers Falls, NY (US);
Vijay Narayanan, New York, NY (US);
Renee T. Mo, Briarcliff Manor, NY (US);
Huiming Bu, Glenmont, NY (US);
Michael P. Chudzik, Danbury, CT (US);
William K. Henson, Beacon, NY (US);
Mukesh V. Khare, Wappingers Falls, NY (US);
Vijay Narayanan, New York, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor device is provided that includes forming a Ge-containing layer atop a p-type device regions of the substrate. Thereafter, a first dielectric layer is formed in a second portion of a substrate, and a second dielectric layer is formed overlying the first dielectric layer in the second portion of the substrate and overlying a first portion of the substrate. Gate structures may then formed atop the p-type device regions and n-type device regions of the substrate, in which the gate structures to the n-type device regions include a rare earth metal.