The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Jan. 03, 2012
Yue Liang, Beacon, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Brian J. Greene, Wappingers Falls, NY (US);
William K. Henson, Beacon, NY (US);
Unoh Kwon, Fishkill, NY (US);
Shreesh Narasimha, Beacon, NY (US);
Xiaojun Yu, Beacon, NY (US);
Yue Liang, Beacon, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Brian J. Greene, Wappingers Falls, NY (US);
William K. Henson, Beacon, NY (US);
Unoh Kwon, Fishkill, NY (US);
Shreesh Narasimha, Beacon, NY (US);
Xiaojun Yu, Beacon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A complementary metal oxide semiconductor (CMOS) device including a substrate including a first active region and a second active region, wherein each of the first active region and second active region of the substrate are separated by from one another by an isolation region. A n-type semiconductor device is present on the first active region of the substrate, in which the n-type semiconductor device includes a first portion of a gate structure. A p-type semiconductor device is present on the second active region of the substrate, in which the p-type semiconductor device includes a second portion of the gate structure. A connecting gate portion provides electrical connectivity between the first portion of the gate structure and the second portion of the gate structure. Electrical contact to the connecting gate portion is over the isolation region, and is not over the first active region and/or the second active region.