Company Filing History:

20 out of 164,108

International Business Machines Corporation

patents

8 out of 37,905

Micron Technology Incorporated

Years Active: 2010-2017

where 'Filed Patents' based on already Granted Patents

31 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9639652 - Compact model for device/circuit/chip leakage current (IDDQ) calculation including process induced uplift factors (2017-05-02),

2. 9349609 - Semiconductor process temperature optimization (2016-05-24),

3. 9337338 - Tucked active region without dummy poly for performance boost and variation reduction (2016-05-10),

4. 9105722 - Tucked active region without dummy poly for performance boost and variation reduction (2015-08-11),

5. 9082877 - Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor (2015-07-14),

6. 9070459 - Erase operation control sequencing apparatus, systems, and methods (2015-06-30),

7. 8993389 - Dummy gate interconnect for semiconductor device (2015-03-31),

8. 8853035 - Tucked active region without dummy poly for performance boost and variation reduction (2014-10-07),

9. 8835234 - MOS having a sic/sige alloy stack (2014-09-16),

10. 8803243 - Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor (2014-08-12),

11. 8785291 - Post-gate shallow trench isolation structure formation (2014-07-22),

12. 8779469 - Post-gate shallow trench isolation structure formation (2014-07-15),

13. 8754412 - Intra die variation monitor using through-silicon via (2014-06-17),

14. 8629022 - Asymmetric FET including sloped threshold voltage adjusting material layer and method of fabricating same (2014-01-14),

15. 8626480 - Compact model for device/circuit/chip leakage current (IDDQ) calculation including process induced uplift factors (2014-01-07),

Title: Innovator Spotlight: Xiaojun Yu - A Leader in Semiconductor Innovations

Introduction: Xiaojun Yu, based in Beacon, NY, is a renowned inventor with an impressive portfolio of 31 patents. His contributions to the field of semiconductor technology have significantly impacted device and circuit design, making him a key figure in the industry.

Latest Patents: Yu's most recent patents demonstrate his expertise and innovative thinking. One notable invention is the "Compact model for device/circuit/chip leakage current (IDDQ) calculation including process induced uplift factors." This invention provides a comprehensive system, method, and computer program for integrating quiescent current leakage models into semiconductor device design and circuit design flows. This model adeptly accommodates various device geometries across a broad spectrum of temperature and voltage ranges, thereby eliminating the need for stacking factor calculations or spreadsheet-based IDDQ calculations. Additionally, this leakage model incorporates parasitic and proximity effects, facilitating calculations at different testing levels, from single devices to full chip designs, all within a unified framework.

Another significant patent is centered around "Semiconductor process temperature optimization." This method involves creating structures with multiple semiconductor devices embedded within a dielectric layer and depositing a thermal optimization layer above. Yu’s approach ensures uniform thermal absorption through strategic patterning, which is integral to improving semiconductor device performance.

Career Highlights: Throughout his career, Xiaojun Yu has held prominent positions at renowned companies, including IBM and Micron Technology Incorporated. His extensive experience in these organizations has allowed him to drive forward crucial advancements in semiconductor technologies.

Collaborations: Yu has collaborated with several distinguished professionals in the field, including Yue Liang and Brian Joseph Greene. These collaborations have led to further innovations and are a testament to the productive partnerships within the industry.

Conclusion: Xiaojun Yu is a pivotal figure in semiconductor innovation, with a noteworthy collection of patents that address complex challenges in device design and optimization. His work continues to shape the landscape of semiconductor technology, inspiring future generations of inventors and engineers.

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