The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Mar. 31, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Brian J. Greene, Fishkill, NY (US);

Yue Liang, Sunnyvale, CA (US);

Xiaojun Yu, Sunnyvale, CA (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/3205 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 21/32051 (2013.01); H01L 21/32055 (2013.01); H01L 29/66545 (2013.01);
Abstract

A method including forming a structure including a plurality of semiconductor devices surrounded by a dielectric layer such that a top surface of the dielectric layer is substantially flush with a top surface of the plurality of semiconductor devices, depositing a thermal optimization layer above the structure, patterning the thermal optimization layer such that a portion of the thermal optimization layer is removed from a above first region of the structure and another portion of the thermal optimization layer remains above a second region of the structure, the first region having a different thermal conductivity than the second region, and heating the structure, the patterned thermal optimization layer causing substantially uniform thermal absorption of the structure.


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