The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Aug. 20, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nicolas L. Breil, Wappingers Falls, NY (US);

Ricardo A. Donaton, Cortlandt Manor, NY (US);

Dong Hun Kang, Hopewell Junction, NY (US);

Herbert L. Ho, New Windsor, NY (US);

Rishikesh Krishnan, Painted Post, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 21/283 (2013.01); H01L 27/1082 (2013.01); H01L 27/1087 (2013.01); H01L 27/10832 (2013.01); H01L 27/10858 (2013.01); H01L 27/10867 (2013.01); H01L 28/90 (2013.01);
Abstract

A deep trench capacitor is provided. The deep trench capacitor may include: a deep trench in a substrate, the deep trench including an lower portion having a width that is wider than a width of the rest of the deep trench; a compressive stress layer against the substrate in the lower portion; a metal-insulator-metal (MIM) stack over the compressive stress layer, the MIM stack including a node dielectric between an inner electrode and an outer electrode; and a semiconductor core within the MIM stack.


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