The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2012

Filed:

Oct. 29, 2009
Applicants:

Karl W. Barth, Hopewell Junction, NY (US);

Ricardo A. Donaton, Hopewell Junction, NY (US);

Spyridon Galis, Hopewell Junction, NY (US);

Kevin S. Petrarca, Hopewell Junction, NY (US);

Shahab Siddiqui, Hopewell Junction, NY (US);

Inventors:

Karl W. Barth, Hopewell Junction, NY (US);

Ricardo A. Donaton, Hopewell Junction, NY (US);

Spyridon Galis, Hopewell Junction, NY (US);

Kevin S. Petrarca, Hopewell Junction, NY (US);

Shahab Siddiqui, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Each of a first substrate and a second substrate includes a surface having a diffusion resistant dielectric material such as silicon nitride. Recessed regions are formed in the diffusion resistant dielectric material and filled with a bondable dielectric material. The patterns of the metal pads and bondable dielectric material portions in the first and second substrates can have a mirror symmetry. The first and second substrates are brought into physical contact and bonded employing contacts between metal pads and contacts between the bondable dielectric material portions. Through-substrate-via (TSV) structures are formed through bonded dielectric material portions. The interface between each pair of bonded dielectric material portions located around a TSV structure is encapsulated by two diffusion resistant dielectric material layers so that diffusion of metal at a bonding interface is contained within each pair of bonded dielectric material portions.


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