The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
Jun. 24, 2009
Kuang-jung Chen, Hopewell Junction, NY (US);
Ricardo A. Donaton, Hopewell Junction, NY (US);
Wu-song Huang, Hopewell Junction, NY (US);
Wai-kin LI, Hopewell Junction, NY (US);
Kuang-Jung Chen, Hopewell Junction, NY (US);
Ricardo A. Donaton, Hopewell Junction, NY (US);
Wu-Song Huang, Hopewell Junction, NY (US);
Wai-Kin Li, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile