The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Aug. 20, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Nicolas L. Breil, Wappingers Falls, NY (US);
Ricardo A. Donaton, Cortlandt Manor, NY (US);
Dong Hun Kang, Hopewell Junction, NY (US);
Herbert L. Ho, New Windsor, NY (US);
Rishikesh Krishnan, Painted Post, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 49/02 (2006.01); H01L 21/283 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 21/283 (2013.01); H01L 27/1082 (2013.01); H01L 27/1087 (2013.01); H01L 27/10832 (2013.01); H01L 27/10858 (2013.01); H01L 27/10867 (2013.01); H01L 28/90 (2013.01);
Abstract
Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; forming a metal-insulator-metal (MIM) stack within a portion of the deep trench, the MIM stack forming including forming an outer electrode by co-depositing a refractory metal and silicon into the deep trench; and filling a remaining portion of the deep trench with a semiconductor.