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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9653535 B1

PDFFull Text
Expired
Date of Patent:
May. 16, 2017

Filed:

Aug. 20, 2015

Dt capacitor with silicide outer electrode and/or compressive stress layer, and related methods

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nicolas L. Breil, Wappingers Falls, NY (US);

Ricardo A. Donaton, Cortlandt Manor, NY (US);

Dong Hun Kang, Hopewell Junction, NY (US);

Herbert L. Ho, New Windsor, NY (US);

Rishikesh Krishnan, Painted Post, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Steven J. Meyers

Hoffman Warnick LLC

Primary Examiner:

Zandra Smith

Assistant Examiner:

Andre′ C Stevenson

Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 49/02 (2006.01); H01L 21/283 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 21/283 (2013.01); H01L 27/1082 (2013.01); H01L 27/1087 (2013.01); H01L 27/10832 (2013.01); H01L 27/10858 (2013.01); H01L 27/10867 (2013.01); H01L 28/90 (2013.01);
Abstract

Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; forming a metal-insulator-metal (MIM) stack within a portion of the deep trench, the MIM stack forming including forming an outer electrode by co-depositing a refractory metal and silicon into the deep trench; and filling a remaining portion of the deep trench with a semiconductor.

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Breil, Nicolas. (2017). Dt capacitor with silicide outer electrode and/or compressive stress layer, and related methods (U.S. Patent No. 9653535). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9653535

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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